| 摘要 |
The raser diode is mfd. by (a) forming a second electroconductive GaAs current breaking layer on a first electroconductive GaAs substrate, (b) defining a fixed section of the current breaking layer, and forming a V-groove, (c) forming a first electroconductive Al-GaAs clad layer and a GaAs layer by the LPE process, (d) forming a V-groove on the first GaAs layer, (e) forming an undoped Al GaAs activating layer, a second Al GaAs layer and a second GaAs layer by the MOCVD process, and (f) forming a second electroconductive electrode on the top of the second GaAs layer, and forming a first electrode on the bottom of the GaAs substrate.
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