The method comprises forming a 1st electrode and a oxide film on the 1st electrode at 600-800deg.C; depositing a dielectric layer of metal oxide; annealing the dielectric layer under O3 atmosphere at 200-300deg.C; and forming 2nd electrode on the dielectric layer.
申请公布号
KR960010001(B1)
申请公布日期
1996.07.25
申请号
KR19920016203
申请日期
1992.09.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KANG, CHANG - SUK;KWON, KI - WON;PARK, TAE - SEO;SUN, YONG - BIN