| 摘要 |
This method is applied to improving of productivity by removing of hillock formed on the oxide film with the difference of thermal expansion coefficient between metal layer and oxide film by LPCVD, low pressure chemical vapor deposition. The double metal layers are produced by the processes of a) evaporating the 1st oxide film(6) of the thickness of 1,000 to 1,200A on the 1st metal layer(1) at 210 to 280deg.C under the conditions of evaporation time 20min, O2 outflow content 120sccm, SiH4 outflow content 90sccm, and the pressure of tube 0.22torr, b) evaporating the 2nd oxide film(7) under the conditions of evaporation time 20min, O2 outflow content 90sccm, SiH4 outflow content 70sccm, and the pressure of tube 0.19torr, temperature set point 425deg.C, c) masking photoresist(3), d) etching photoresist(3), and e) evaporating the 2nd metal layer(4).
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