| 摘要 |
Method of forming a crystalline silicon film having excellent characteristics. An amorphous silicon film is formed on a substrate having an insulating surface. The amorphous film is thermally annealed at 400 DEG -620 DEG C., preferably at 520 DEG -620 DEG C., more preferably at 550 DEG -600 DEG C., for 1-12 hours. The silicon film is crystallized to a crystallinity of 0.1-99.9%, preferably 1-99%. Then, the silicon film is irradiated with UV laser radiation. Thus, the crystallinity of the silicon film is improved in a short time. Crystalline silicon films having uniform characteristics are obtained.
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