| 发明名称 |
Electrode material and electrode for III-V group compound semiconductor |
| 摘要 |
The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of InxGayAlzN, where x+y+z=1, 0</=x</=1, 0</=y</=1, and 0</=z</=1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
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| 申请公布号 |
US5708301(A) |
申请公布日期 |
1998.01.13 |
| 申请号 |
US19950392244 |
申请日期 |
1995.02.22 |
| 申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
IYECHIKA, YASUSHI;FUKUHARA, NOBORU;TAKADA, TOMOYUKI;ONO, YOSHINOBU |
| 分类号 |
H01L33/30;H01L33/40;(IPC1-7):H01L23/48 |
主分类号 |
H01L33/30 |
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