发明名称 |
METHOD FOR MAKING QUANTOM FINE-WELL USING GaAs/AIGaAs SUBSTRATE |
摘要 |
The quantum fine line manufacturing method is comprised of the step of (a) growing AlGaAs layer(20) on a GaAs substrate(10), then forming a photoresist mask(30) for digging a V-groove in [011 direction on the AlGaAs layer(20) by means of the photolithography, the step of (b) etching with etching solution which has volume ratio of H2SO4:H2O2:H2O=1:2:40 to form the V-groove, the step of (c) growing a plurality of GaAs(50) and AlGaAa(40) layers by means of the epitaxial growth method on the substrate where the V-groove is formed to form the quantum fine line(QWRs) in the center of the V-groove. Here, a side quantum well(side-MQWL) is formed in both sides of the quantum fine line simultaneously and a top quantum well(top-MQWL) is formed in the outside of the V-groove simultaneously.
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申请公布号 |
KR0130610(B1) |
申请公布日期 |
1998.04.06 |
申请号 |
KR19940017508 |
申请日期 |
1994.07.20 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
MIN, SUK-KI;KIM, MOO-SUNG;KIM, YONG;LEE, MIN-SUK |
分类号 |
H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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主权项 |
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地址 |
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