发明名称 |
Low Noise Amplifier With Noise And Linearity Improvement |
摘要 |
A low noise amplifier (LNA) has been disclosed for the noise and linearity performance improvement. The LNA includes an amplifying transistor and an auxiliary transistor. The amplifying transistor includes a first terminal for receiving an input signal of the LNA, a second terminal for outputting an output signal of the LNA, and a third terminal. The auxiliary transistor has a first terminal, a second terminal coupled to the second terminal of the amplifying transistor, and a third terminal electrically connected to the first terminal of the amplifying transistor. |
申请公布号 |
US2016344345(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201514882470 |
申请日期 |
2015.10.14 |
申请人 |
WIN Semiconductors Corp. |
发明人 |
Huang Fan-Hsiu;Chiu Jui-Chieh;Huang Chih-Wen |
分类号 |
H03F1/02;H03F3/193;H03F3/19;H03F1/26 |
主分类号 |
H03F1/02 |
代理机构 |
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代理人 |
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主权项 |
1. A low noise amplifier (LNA), comprising:
an amplifying transistor, comprising:
a first terminal, configured to receive an input signal of the LNA;a second terminal; anda third terminal; and an auxiliary transistor, comprising:
a first terminal;a second terminal, coupled to the second terminal of the amplifying transistor; anda third terminal, electrically connected to the first terminal of the amplifying transistor. |
地址 |
Tao Yuan City TW |