发明名称 Low Noise Amplifier With Noise And Linearity Improvement
摘要 A low noise amplifier (LNA) has been disclosed for the noise and linearity performance improvement. The LNA includes an amplifying transistor and an auxiliary transistor. The amplifying transistor includes a first terminal for receiving an input signal of the LNA, a second terminal for outputting an output signal of the LNA, and a third terminal. The auxiliary transistor has a first terminal, a second terminal coupled to the second terminal of the amplifying transistor, and a third terminal electrically connected to the first terminal of the amplifying transistor.
申请公布号 US2016344345(A1) 申请公布日期 2016.11.24
申请号 US201514882470 申请日期 2015.10.14
申请人 WIN Semiconductors Corp. 发明人 Huang Fan-Hsiu;Chiu Jui-Chieh;Huang Chih-Wen
分类号 H03F1/02;H03F3/193;H03F3/19;H03F1/26 主分类号 H03F1/02
代理机构 代理人
主权项 1. A low noise amplifier (LNA), comprising: an amplifying transistor, comprising: a first terminal, configured to receive an input signal of the LNA;a second terminal; anda third terminal; and an auxiliary transistor, comprising: a first terminal;a second terminal, coupled to the second terminal of the amplifying transistor; anda third terminal, electrically connected to the first terminal of the amplifying transistor.
地址 Tao Yuan City TW