| 发明名称 |
METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask. |
| 申请公布号 |
US2016351408(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615130515 |
申请日期 |
2016.04.15 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
IM BADRO;CHO YOONCHUL;KANG SANGYEOL;KIM DAEHYUN;LEE DONGKAK;LEE JUN-NOH;KIM BONGHYUN;LEE KONGSOO |
| 分类号 |
H01L21/308;H01L21/306;H01L21/3065 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming carbon-containing patterns on an etch target; increasing a degree to which side surfaces of the carbon-containing patterns are hydrophilic by treating the carbon-containing patterns with a hydrophilic-enhancing process; forming poly-crystalline silicon spacers on the side surfaces of the carbon-containing patterns after the hydrophilic-enhancing process; and patterning the etch target using the poly-crystalline silicon spacers. |
| 地址 |
SUWON-SI KR |
