| 摘要 |
PROBLEM TO BE SOLVED: To provide an angle measuring instrument capable of measuring accurately an angle of a sample without depending on manual work, and to provide a thickness measuring method for a diffusion layer of a semiconductor wafer using the angle measuring instrument. SOLUTION: In this thickness measuring method, the sample S is fed from a surface of a semiconductor wafer, the sample S is attached onto a bevel jig 2 having a sloped face to be polished, a polishing face St having an angle to a main plane Sm is formed, resistance value are measured in many portions in the polishing face St, measuring positions therein and the resistance values are stored, the sample S is aligned using a microscope 5, then the sample S is moved along a horizontal direction, a height and a horizontal position at least in one point on the polishing face St of the sample S are measured by a laser sensor, then the sample S is moved horizontally, a position in another point on the face St is measured, respective positional informations are transmitted to a computer after A/D conversion, the angle of the sample S is calculated by the computer based on a vertical distance and horizontal distance between plural points, and a thickness of a diffusion layer is calculated based on the angle herein, and the read-out measured distance and resistance value.
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