| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit and its manufacturing method which has simple processes and an MIS surge protector, capable of absorbing a large amount of energy sufficient to effectively protect circuit elements as a protective element. SOLUTION: The manufacturing method comprises forming an insulation film 130, isolation layer 110, dielectric layer 120, insulation layer 130, resistance layer 140, diffusion barrier layer 150 and a first conductive layer 160 on the entire upper side of a substrate 10, forming a second conductive layer 170 on the entire downside of the substrate 10 and applying lithography and selective etching to form an MIS surge protector 51, input/output electrode regions, resistors 52 and capacitors 53.
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