发明名称 |
Solder-on back metal for semiconductor die |
摘要 |
A solderable back contact for semiconductor die consists of a titanium layer bonded to the bottom of the die. The free surface of the titanium layer is coated with a copper layer. A soft solder layer joins the bottom of the die to a copper lead frame by first heating the die to below the melting point of the solder, and then ultrasonically "scrubbing" the solder to cause it to bond to the die and lead frame with a minimum sized solder fillet.
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申请公布号 |
US6376910(B1) |
申请公布日期 |
2002.04.23 |
申请号 |
US19990361633 |
申请日期 |
1999.06.23 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
MUNOZ JORGE;CHEAH CHUAN |
分类号 |
H01L23/482;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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