| 摘要 |
PURPOSE: An etching method of semiconductor devices is provided to improve a topology of patterns by using an ARC(Anti-Reflective Coating) film. CONSTITUTION: After forming an objective etch layer(22) on a semiconductor substrate(21), an ARC film having thickness of 1000-5000Å is formed on the objective etch layer. The ARC film is then etched by using a photoresist pattern(24a) as a mask. The objective etch layer(22) is etched by using an ARC pattern(23a) and the photoresist pattern(24a) as a mask. An organic ARC or an inorganic ARC is used as the ARC pattern(23a). Also, the photoresist pattern(24a) has an isotropic profile.
|
