发明名称 Bottom anti-reflective coat forming composition for lithography
摘要 The present invention relates to a bottom anti-reflective coat forming composition having the resin with the structural unit comprising maleimide or maleimide derivative for the lithography process in the preparation of semiconductor device. The resin comprises maleimide or derivative thereof in the principal chain or the side chain and its weight-average molecular weight is 700-1000000. The invention offers the bottom anti-reflective coating for lithography showing high anti-reflective effect, no intermixing with resist layer, excellent resist pattern, and large dry etching rate in comparison to resist.
申请公布号 US2002156148(A1) 申请公布日期 2002.10.24
申请号 US20020078108 申请日期 2002.02.20
申请人 NISSAN CHEMICAL INDUSTRIES, LTD. 发明人 ARASE SHINYA;KISHIOKA TAKAHIRO;MIZUSAWA KEN-ICHI
分类号 G03F7/038;G03F7/09;(IPC1-7):C08C1/00 主分类号 G03F7/038
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