| 摘要 |
PURPOSE: To efficiently remove an unwanted metal film by one chucking from the periphery of a device wafer having a metal film formed on the surface so that the end of the remaining metal film is at right angles. CONSTITUTION: The polishing method comprises steps for chucking and spinning a device wafer 1 around an axial line L, line-contacting arcuate working faces 22 of a first and second sloped polishing members 13a, 13b respectively to the front and back inclined surfaces 2a, 2b of a wafer 1, line-contacting an arcuate peripheral working face 42 of a side polishing member 14 to the side surface 3 of the wafer 1 during spinning of the wafer, and parallel contacting a peripheral working face of a disc-shaped peripheral polishing member 15 being spinning around its axial line to the surface peripheral edge of the wafer 1. Thus, the contacted portions is polished by the polishing members all at the same time to remove an unwanted metal film from the periphery of the wafer 1.
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