| 摘要 |
PROBLEM TO BE SOLVED: To shorten a time required for computation to determine a light exposure for a semiconductor integrated pattern. SOLUTION: An electron beam lithography and exposure system 10 is composed of an exposure data computing means 11 for computing exposure data of light exposure corrected for proximity effect and corresponding to the number of times of exposure; an exposure data storing means 12 for storing the exposure data is memory; and a lithography unit 15 which repetitively makes exposure and lithographs using the exposure data. Thus, exposure data computed when a semiconductor integrated pattern is lithographed is stored in memory, and, after exposure is made using the exposure data, the exposure data stored in memory is repetitively used in subsequent exposure processing. As a result, the amount of time required for correcting exposure data for proximity effect and computing a light exposure corresponding to the number of times of exposure is shortened, and a pattern lithography time is shortened.
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