发明名称 |
Optical proximity correction method utilizing phase-edges as sub-resolution assist features |
摘要 |
A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge. <IMAGE> |
申请公布号 |
EP1298489(A2) |
申请公布日期 |
2003.04.02 |
申请号 |
EP20020256694 |
申请日期 |
2002.09.26 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
VAN DEN BROEKE, DOUGLAS;CHEN, J. FUNG |
分类号 |
G03F1/00;G03F1/26;G03F1/34;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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