| 摘要 |
PROBLEM TO BE SOLVED: To provide a porous silica thin film which has a low relative dielectric constant and is suitable as an insulation film of a semiconductor element, and a composition solution for producing the film which excels in storage stability. SOLUTION: The coating composition comprises a silica precursor containing at least one compound selected from a specific mono- to hexafunctional alkoxysilane, its hydrolyzate, and its polycondensate and an organic polymer containing a branched organic polymer bonded to a two- or more-component aliphatic ether block copolymer through a connecting group having at least three carbon-oxygen bonds. COPYRIGHT: (C)2004,JPO
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