METHOD FOR FORMING CHARGE STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a charge storage electrode of a semiconductor device is provided to reduce a resistance by obtaining a sufficient contact area between the charge storage electrode and a contact plug. CONSTITUTION: A first insulating layer(14) is formed on a semiconductor substrate(11) including a contact plug(13). The contact plug is exposed by performing a patterning process. A first conductive layer(15) is formed on the first insulating layer. A second insulating layer(16) is formed on the entire surface of the semiconductor substrate. A surface of the first insulating layer is exposed by polishing the second insulating layer and the first conductive layer. A third insulating layer(17) is formed on the entire surface of the semiconductor substrate. A second conductive layer(18) is formed on the entire surface of the semiconductor substrate to be connected to the first conductive layer. The third and the second insulating layers are exposed by etching the second conductive layer. A charge storage electrode is formed by removing the first, the second, and the third insulating layers.