METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING CAPACITOR OF IMPROVED CHARACTERISTICS

摘要

PURPOSE: A method for manufacturing semiconductor device is provided to improve capacitor characteristics by enlarging capacitance of the capacitor and by reshaping the capacitor. CONSTITUTION: An insulating film(2) is formed on a semiconductor substrate(1). A hard mask harder to polish than the insulating film upon chemical mechanical polishing and having a greater selective ratio with respect to the insulating film than a resist film is formed on the insulating film under a predetermined etching condition. A hole(20) is formed penetrating the hard mask and the insulating film to extend in a vertical direction with respect to a main surface of the semiconductor substrate. A capacitor lower electrode(8) is formed along a side surface of the hole. A capacitor dielectric film(9) is formed along a surface of the capacitor lower electrode. A capacitor upper electrode(10) is formed to contact a surface of the capacitor dielectric film.