| 摘要 |
PROBLEM TO BE SOLVED: To etch layers to be etched that are masked by mask layers in a predetermined pattern width, while making each pattern width of the mask layer uniform. SOLUTION: In a first process, reaction products are deposited on the sidewall of a patterned mask layer 212, and process conditions are set in such a manner as to increase each pattern width, and to make the pattern width of the mask layer 212-1 belonging to a first region reg11 in which the pattern width has been different in an initial state (a) coincide with the pattern width of the mask layer 212-2 belonging to a second region reg12 at a first process termination point (b). In a second process, trimming treatment narrowing down the pattern width of the mask layer 212 is carried out in parallel, not only etching an anti-reflection coating 210 longitudinally. At a second process termination point (c), the pattern widths of the mask layer and the anti-reflection coating are uniformly adjusted in the entire region of a wafer regardless of pattern densities. COPYRIGHT: (C)2005,JPO&NCIPI
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