| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory in which a disturb phenomenon that erases data in non-selective memory cells is suppressed. SOLUTION: The memory is provided with bit lines BL0 to BL7, word lines WL0 to WL7 which are arranged to cross the bit lines BL0 to BL7 and a memory cell array 1 which is connected between the bit lines BL0 to BL7 and the word lines WL0 to WL7 and includes memory cells that hold data "1" or data "0". In addition to batch reading operations conducted for selected memory cells, a voltage Vp, which is an inverse polarity voltage with respect to the voltages (-Vp1 and -Vp0) applied to the non-selective memory cells during a reading operation, is applied to at least the non-selective memory cells. COPYRIGHT: (C)2005,JPO&NCIPI
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