| 摘要 |
PROBLEM TO BE SOLVED: To improve sensitivity by increasing a saturation signal charge (Qs) without causing the increase of the area of a photoelectric conversion element and the increase of impurity concentration. SOLUTION: By forming the pn junction photodiode capacity forming area of an image sensor not only in the direction of a substrate surface but also in the depthwise direction of a substrate with respect to a silicon substrate, a signal charge storage is magnified to increase the effective area of the signal charge storage. In other embodiments, in order to make it easy to read signal charge from the signal charge storage magnified in the depthwise direction of the substrate, the shape of the signal charge embodiment is made to be radial with a transfer gate as the center formed near the transfer gate, or potential is inclined. In another embodiment, by varying the depth of a p-area on the most-surface according to the purpose of sensitivity improvement, color sensitivity of each pixel is varied. COPYRIGHT: (C)2006,JPO&NCIPI
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