发明名称 |
Array substrate and display device |
摘要 |
An array substrate includes a gate line, a data line and a plurality of pixel units defined by the gate line and the data line intersecting with each other, which are formed on a base substrate, and each pixel unit includes a thin film transistor. The farther the thin film transistor is away from a gate driver side of the array substrate, the more likely an overlapping area between an active layer and a source electrode of the thin film transistor shows an increasing trend. By changing the overlapping area between the active layer and the source electrode, a dielectric constant between a gate electrode and the source electrode increases to enlarge a gate-source capacitance Cgs, leading to an increase of ΔVp; as a result, a common electrode voltage tends to be stable, thus avoiding crosstalk at the time of displaying. |
申请公布号 |
US9490272(B2) |
申请公布日期 |
2016.11.08 |
申请号 |
US201414441960 |
申请日期 |
2014.09.20 |
申请人 |
BOE Technology Group Co., Ltd. |
发明人 |
Nagayama Kazuyoshi |
分类号 |
H01L27/12;G02F1/1368 |
主分类号 |
H01L27/12 |
代理机构 |
Banner & Witcoff, Ltd. |
代理人 |
Banner & Witcoff, Ltd. |
主权项 |
1. An array substrate, comprising a gate line, a data line and a plurality of pixel units defined by the gate line and the data line intersecting with each other, which are formed on a base substrate, and each pixel unit comprising a thin film transistor, wherein,
the farther the thin film transistor is away from a gate driver side of the array substrate, an overlapping area between an active layer and a source electrode of the thin film transistor shows an increasing trend, the pixel units are divided into n groups by columns, where 1<n ≦N, and N is a total number of columns; from a first column of pixels near the gate driver side of the array substrate, an overlapping area between an active layer and a source electrode of a thin film transistor in a (i+1)th group of pixel units is greater than an overlapping area between an active layer and a source electrode of a thin film transistor in a ith group of pixel units by ΔSi, where 1≦i≦n−1; and overlapping areas between active layers and source electrodes of thin film transistors in a same group are equal. |
地址 |
Beijing CN |