发明名称 Array substrate and display device
摘要 An array substrate includes a gate line, a data line and a plurality of pixel units defined by the gate line and the data line intersecting with each other, which are formed on a base substrate, and each pixel unit includes a thin film transistor. The farther the thin film transistor is away from a gate driver side of the array substrate, the more likely an overlapping area between an active layer and a source electrode of the thin film transistor shows an increasing trend. By changing the overlapping area between the active layer and the source electrode, a dielectric constant between a gate electrode and the source electrode increases to enlarge a gate-source capacitance Cgs, leading to an increase of ΔVp; as a result, a common electrode voltage tends to be stable, thus avoiding crosstalk at the time of displaying.
申请公布号 US9490272(B2) 申请公布日期 2016.11.08
申请号 US201414441960 申请日期 2014.09.20
申请人 BOE Technology Group Co., Ltd. 发明人 Nagayama Kazuyoshi
分类号 H01L27/12;G02F1/1368 主分类号 H01L27/12
代理机构 Banner & Witcoff, Ltd. 代理人 Banner & Witcoff, Ltd.
主权项 1. An array substrate, comprising a gate line, a data line and a plurality of pixel units defined by the gate line and the data line intersecting with each other, which are formed on a base substrate, and each pixel unit comprising a thin film transistor, wherein, the farther the thin film transistor is away from a gate driver side of the array substrate, an overlapping area between an active layer and a source electrode of the thin film transistor shows an increasing trend, the pixel units are divided into n groups by columns, where 1<n ≦N, and N is a total number of columns; from a first column of pixels near the gate driver side of the array substrate, an overlapping area between an active layer and a source electrode of a thin film transistor in a (i+1)th group of pixel units is greater than an overlapping area between an active layer and a source electrode of a thin film transistor in a ith group of pixel units by ΔSi, where 1≦i≦n−1; and overlapping areas between active layers and source electrodes of thin film transistors in a same group are equal.
地址 Beijing CN