| 摘要 |
A radiation responsive device is disclosed having a barrier generating material, such as a dye or metal, interposed between two semiconductive elements, at least one of which is radiation penetrable. Metal layers are associated with the outer faces of the semiconductive elements so that the device can be biased by an externally applied potential. Radiation absorbed adjacent the barrier generating material produces a current gain in the forwardly biased device. The device can be fabricated by successively vacuum depositing upon a semiconductive element surface a layer of a barrier generating material, a semiconductive overlayer and a metal layer. The metal layer can be chosen to form a rectifying junction with the semiconductive overlayer. The barrier generating material is chosen to exhibit a surface photovoltage when applied to the surface of one of the semiconductive elements.
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