| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical device having a configuration and a structure capable of materializing suppression of electron overflow without providing an electron barrier layer.SOLUTION: This semiconductor optical device has a laminate structure comprising a first compound semiconductor layer having an n-type, an active layer, and a second compound semiconductor layer having a p-type, the active layer has at least three-layer barrier layer, and a well layer held between barrier layers, and when band-gap energy of the barrier layer adjacent to the second semiconductor layer is set as Eg, hand-gap energy of the barrier layer between the well layers is set as Eg, and band-gap energy of the barrier layer adjacent to the first compound semiconductor layer is set as Eg, Eg>Eg>Egis satisfied.SELECTED DRAWING: Figure 1 |
