| 发明名称 |
SELECTIVE WRITEEIN AND ERASING METHOD FOR TWO DIMENTIONAL MEMORY ARRAY USING SEMICOONDUCTOR NONNVOLATILE MEMORY ELEMENT |
| 摘要 |
<p>PURPOSE:To enable the selective write-in and erasing for the arbitrary memory element constituting two dimentional memory array easily, by grasping the write-in and erasing performance of memory elements quantitatively.</p> |
| 申请公布号 |
JPS52120636(A) |
申请公布日期 |
1977.10.11 |
| 申请号 |
JP19760037428 |
申请日期 |
1976.04.02 |
| 申请人 |
SANYO ELECTRIC CO |
发明人 |
HASEGAWA YUZURU |
| 分类号 |
G11C17/00;G11C16/04;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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