发明名称 BANDGAP VOLTAGE REFERENCE EMPLOYING SUB-SURFACE CURRENT USING A STANDARD CMOS PROCESS
摘要 <p>A bandgap voltage reference employing only subsurface currents which may be fabricated using a standard CMOS process. The reference includes first and second vertical bipolar transistors (10, 12) having common collectors formed in an integrated circuit substrate. A first resistor (16) connects the emitter of the first transistor (10) to ground potential (20). A second resistor (22) connects the emitter of the second transistor (12) to a reference node (24) while a third resistor (26) connects the reference node to ground. A differential amplifier (28) has a positive input connected to the reference node (24), a negative input connected to the first transistor emitter and an output (30) connected to the bases of the first and second transistors and also providing the reference voltage output. In a preferred form the output of the differential amplifier is buffered by a third transistor (32) and coupled by a resistive divider (36, 38) to the first and second transistor bases so that the reference voltage may be selected at any scalar of the basic bandgap voltage. </p>
申请公布号 WO1981002348(A1) 申请公布日期 1981.08.20
申请号 US1980000650 申请日期 1980.05.22
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