| 摘要 |
PURPOSE:To reduce a threshold value of a driving current of laser light emission and to make oscillation even in a liquid nitrogen temperature possible by a method wherein each layer of ternary layered semiconductor laser is made of PbCdTe, and a Cd content of the second layer that is to be an active layer is made less than the first and third layer. CONSTITUTION:The first layer 1, the second layer 2 and the third layer 3 of a semiconductor laser constituting a ternary layered structure are all consisting of a ternary component semiconductor consisting of PbCdTe, and Cd content at the second layer which is to be an active layer is prefered to be for example 3%, and on the other hand the Cd contents in the first and second layers are preferred to be for example 5%. If the Cd content in the PbCdTe crystal is reduced, width of forbidden band is reduced and induced light emission is easy to be excited, and a threshold value of a driving current for laser light emission is reduced. By this constitution oscillation can be easily done even in a liquid- nitrogen temperature. |
