| 摘要 |
PURPOSE:To form a gate oxide film with less defects for the enhancement of quality, by adhering metallic silicide with oxidized surface on a insulating substrate ti provide a metallic wiring with the both ends superposed on the silicide thereon via an amorphous Si layer. CONSTITUTION:The high melting point metallic silicide 15 covered with an Si oxide film 16 over the surface is adhesion formed on an insulating substrate 1. The island amorphous Si layer 2 is selectively formed thereon further to selectively adhesion-form a source electrode 7 and drain electrode 8 for superposing on the silicide 15 to obtain MOS FET. Thus, thin insulating film does not cause pin holes for good adhesion of silicide on the insulating substrate with washability serving to prevent contamination. |
