| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
A recess is formed in a semiconductor substrate and a contact hole is formed in a bottom region of the recess. Circuit elements on a main surface of the semiconductor substrate are connected to conductive elements on an opposite surface of the substrate through the contact hole in the recess.
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| 申请公布号 |
US2003141571(A1) |
申请公布日期 |
2003.07.31 |
| 申请号 |
US20030366344 |
申请日期 |
2003.02.14 |
| 申请人 |
ITOH MASAAKI |
发明人 |
ITOH MASAAKI |
| 分类号 |
H01L23/52;H01L21/06;H01L21/3205;H01L21/338;H01L21/768;H01L21/8232;H01L23/48;H01L23/64;H01L27/06;H01L27/095;H01L29/41;H01L29/812;(IPC1-7):H01L29/40 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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