| 摘要 |
PURPOSE:To facilitate a sputtering treatment and to decrease stages by introducing a gas through a small hole provided to the target of a sputerring device of opposed flat plate electrode type, ionizing the same and depositing a target material partially on the surface of a sample facing the target. CONSTITUTION:A fine hole 4 of 1-2mm. diameter is provided to a target 11 which is provided in the position facing a desired part to be deposited of a sample 2. A hole communicating with the hole 4 is also provided to a stage 5 placed thereon with said target 11 and a gas is introduced through said hole from the outside of a vacuum vessel 3 to ionize the gas near the hole 4. If, for example, the target 11 is a chromium plate, the chromium plate is sputtered and forms chromium films selectively on the sample 2 in the position facing the target. |
