| 摘要 |
<p>An amorphous silicon material and devices fabricated of two deposited layers of silicon, the two layers having opposite spin orientation. The deposition is made under the influence of a magnetic field for the first layer and the opposite magnetic field for the second layer. Apparatus suitable for forming devices according to the process of the invention comprises: (a) heating element means (20) for holding at least one substrate (55) on which the semiconductor layers are formed; (b) a first electrode (22) for forming a glow discharge; (c) a second electrode (34) for forming the glow discharge opposed to said first electrode; (d) power supply means (60) for supplying power to said first electrode and said second electrode to form said glow discharge; (e) magnetic field producing means (30) adjacent said substrate holder for producing a first magnetic field with a first orientation at said substrate holder; (f) means for reversing said magnetic field to produce a second magnetic field with a second orientation at said substrate holder; (g) a chamber (15) for holding said substrate holder, first electrode, and second electrode; (h) means (40) communicating with said chamber for forming a vacuum in said chamber; and (i) means (45) communicating with said chamber for passing a gas containing the material to be formed on the substrate into the chamber.</p> |
