| 摘要 |
PURPOSE:To convert easily an upper magnetic matter into a pattern of a prescribed shape, by forming a photoresist layer so as to eliminate the difference of level at a front gap part for the photoresist which is used to form the upper magnetic matter of a thin film magnetic head. CONSTITUTION:An insulated layer 32, a lower magnetic matter 33 of ''Permalloy '', etc., an insulated layer 34 serving as a gap, a level difference eliminating layer 37 of an organic material, and an upper magnetic matter 38 of NiFe, etc. are formed on a substrate 31. Then the 1st photoresist layer 39 is coated with 1/3 thicknesses T2 and T1 compared with the height of the level difference A of the front gap part. A metallic thin film of Ti, Cr or Al is formed on the layer 39 to be used as a mask material when the layer 39 is etched with an ion. Then the 2nd photoresist layer is formed on the mtallic thin film. A prescribed pattern is formed by an ion eithing process in an atmosphere of O2 and Ar. In such a way, a thin film magnetic head is obtained in an easy way. |
