发明名称 DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR JUNCTION LASER
摘要 PURPOSE:To enable the secure laser oscillation of single longitudinal mode with small sized elements by a method wherein the laser oscillation of unnecessary mode is restricted by forming a short non-excitation part of the length approx. 0.1mm.. CONSTITUTION:When the width of a buried layer 108 of an excitation part under a stripe electrode 105 is W1, and that of a buried layer 109 of the non-excitation part W2, and the length thereof 0.1mm., the layers are formed to the relation of W1<W2. An electrode is not provided on an enlarged buried active layer 110. When a voltage is impressed by deciding the electrode 105 as the positive electrode and the electrode 106 as the negative electrode, a current flows in the layer 108 by the effect of the buried layer 111, and accordingly the buried active layer 101 becomes a photo amplification layer. The unnecessary Fabry- Perot resonation longitudinal mode, if sufficiently absorbed to the non-excitation part, is erased because of no reflection effectively from the end surface 113.
申请公布号 JPS5944884(A) 申请公布日期 1984.03.13
申请号 JP19820154038 申请日期 1982.09.06
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 IKEGAMI TETSUHIKO
分类号 H01S5/00;H01S5/10;H01S5/12;H01S5/16;H01S5/223 主分类号 H01S5/00
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