| 摘要 |
<p>PURPOSE:To obtain a semiconductor device generating no electrolytic corrosion, and moreover of low cost when a semiconductor chip is to be fixed on an arrangement base using a brazing material consisting of a tin-copper alloy by a method wherein a vanadium layer and a nickel layer are laminatedly adhered previously to the back of the chip, and as for the brazing material, a brazing material having composition of 38-92.4wt% of tin, and the remainder the copper is used. CONSTITUTION:A vanadium layer 2 of 300-700Angstrom thickness and a nickel layer 3 1,000-3,000Angstrom thickness are laminated to be adhered to the back of a semiconductor wafer before divided into a semiconductor chip 1, and a brazing material 4 consisting of 38-92.4wt% of tin, and copper of the remainder is adhered to 5,000Angstrom -3mum thickness on the layer 3. Then the wafer thereof is scribed to be separated into the individual chip 1, the brazing material 4 of the chip 1 is pressed on an arrangement base 5 heated previously at 415 deg.C or more, and after the brazing material 4 is molten, it is cooled to be reset. Accordingly, the exfoliation of the chip 1 according to electrolytic corrosion is removed, and yield of the device is enhanced.</p> |
