| 摘要 |
PURPOSE:To increase the controlling performance of an ion microbeam implantation device by obtaining sample information perpendicular to the direction of beam scanning at the same time when ion beam implantation is performed by adding high frequency scanning having a small amplitude perpendicularly to the scanning direction and monitoring secondary ions discharged from the surface of a sample. CONSTITUTION:A beam formed by focusing discharged ion is scanned over a sample 7 while applying X-axis deflection voltage (Vx) having sawteeth-like wave and Y-axis deflection voltage (Vy) having sawteeth-like wave formed by adding high frequency wave having a small amplitude in direction perpendicular to the direction of the beam scanning to the electrode of a deflector for deflecting the beam. From among the intensities of secondary ions discharged from the sample 7, components having the same frequency as high frequency wave are extracted through a rock-in amplifier so as to obtain a relation curve between the intensity (I) of secondary electrons and the y value. From the change of the above relation curve, both ends of an ion implantation area 11 in the y-axis direction are detected. As a result, the position of the beam can be detected at the same time when ion beam implantation is performed, thereby enabling the controlling performance of the device to be increased. |
