发明名称 FORMING METHOD OF MULTILAYER INTERCONNECTION
摘要 PURPOSE:To reduce the irregularities of the undulating stepped section of the upper surface section of an insulating layer formed to the upper section of the first layer first wiring, and to improve the adhesive properties of the second layer second wiring shaped to the upper section of the insulating film by removing the corner sections of the first layer wiring formed on a substrate. CONSTITUTION:The first layer first wirings 4A, 4B are formed to the upper section of a substrate 1, and the corner sections of the first wiring are removed. An insulating film 5 is shaped on the whole surface on the first wirings 4A, 4B. The insulating film 5 of the upper section of the first wiring is removed selectively to form a connecting hole 6. The second layer second wiring 7 is shaped to the upper section of the insulating film 5 so as to electrically connect to the first wiring 4B through the connecting hole 6. The corner sections of the upper sections of the first wirings 4A, 4B can be removed excellently through sputtering etching or reactive ion etching.
申请公布号 JPS59224142(A) 申请公布日期 1984.12.17
申请号 JP19830097804 申请日期 1983.06.03
申请人 HITACHI SEISAKUSHO KK 发明人 ABE KATSUHIKO
分类号 H01L21/3205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/88 主分类号 H01L21/3205
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