| 摘要 |
PURPOSE:To enable the reduction in crystallogical slippage by growing a more uniform film on a semiconductor substrate by placing a guartz plate in the outer peripheral surface of a susceptor. CONSTITUTION:A semiconductor substrate 16 is placed in a reaction chamber 9, and the susceptor 21 made of a material such as graphite of large thermal conductivity is installed at the position opposed to an infrared ray lamp heater unit 13 across a transparent quartz plate 14. Further, there is a ringlike auxiliary base 22 made of opaque quartz which surrounds the outer periphery of the susceptor 21, which is nearly coincident with the susceptor 21 in level. The quartz plate 22 receives the radiated heat out of the unit 13 from above, receives the release of heat out of the susceptor from inside, and thus release heat only to the bottom and to outside. However, because of a small thermal conductivity, a uniform temperature distribution can be obtained on a susceptor 6. |
