MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To shorten a channel while stabilizing a manufacturing process by forming a gate electrode, a source electrode and a drain electrode so as to be mutually insulated while leaving an insulating film positioned to the side wall section of the gate electrode. CONSTITUTION:A gate electrode 5 formed on a GaAs substrate 1 is shaped by a photo-resist 4 with eave sections 4d-4g projecting in the direction parallel with the substrate 1. An SiO2 film 24 is applied and shaped on the whole surface. Only the SiO2 films 24a-24c positioned at the side wall sections of the gate electrode 5 are left through anisotropic etching. An Au-Ge alloy film and an Ni film are applied and formed on the whole surface in succession through an evaporation method, and a source electrode 8 and a drain electrode 9 consisting of an AuGe/Ni film 7 are formed.