发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To make the whole surface of a target into high-density plasma, to form a film of the target substance on a substrate at high speed, and to prolong the life of the target by rotating the target in the titled sputtering device, and arranging an electromagnet on the rear surface of the target. CONSTITUTION:A substrate 7 is furnished in the vacuum chamber 6 of a sputtering device, and a discoid target 1 which can be rotated by a motor 4 at high speed is provided opposite to the substrate 7. An electromagnet 2 which is excited by an electric power source 9 is arranged on the rear surface of the target 1. Since the diameter of the electromagnet 2 is smaller than the radius of the target 1, a magnetic loop by the electromagnet 2 is close within the radius of the target 1. Accordingly, a leakage magnetid field of the electromagnet 2 is moved voer almost the whole surface of the revolving target 1, and the high density of plasma can be obtained. Consequently, the surface of the target 1 is uniformly sputtered at high speed, and the thin film of the expensive target material is efficiently formed on the surface of the substrate 7 at high speed.
申请公布号 JPS619573(A) 申请公布日期 1986.01.17
申请号 JP19840127434 申请日期 1984.06.22
申请人 HITACHI SEISAKUSHO KK 发明人 FUNAMOTO SUSUMU
分类号 C23C14/36;C23C14/35;H01J37/34 主分类号 C23C14/36
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