| 摘要 |
PURPOSE:To equalize characteristics by implanting group II ions and group V ions forming a semiconductor into the same region as impurities on the formation of tiered type P-N junctions and implanting group II ions as an impurity in the formation of a titled type P-N junction. CONSTITUTION:A wafer constituted by an InP buffer layer 5 grown in an epitaxial manner, an InGaAs optical absorption layer 6, an InGaAsP layer 7, an InP multiplication layer 8 and an N<->-InP cap layer 9 is prepared onto an InP substrate 1 as group III-V compound semiconductors, an SiO2 insulating film 3 is applied as a mask, and Be ions as group II ions and P ions as group V ions are implanted into a selectively bored region to shape a P-type layer 2. Be ions are implanted into a region, to which a window is bored selectively so as to surround the region into which Be and P are implanted, to shape a P-type layer 4', the whole region of the wafer is coated with an SiO2 insulating film 3, and a step type P-N junction region 21 and a titled type P-N junction region 4 are formed through heat treatment. According to the system, a device having excellent uniformity in multiplication sensitivity in a light-receiving surface and characteristics at every product can be acquired. |
