| 摘要 |
PURPOSE:To obtain a photoconductive member having excellent electrostatic chargeableness, low residual potential, high sensitivity over a wide wavelength region, good adhesiveness to a substrate and excellent environment resistance by using microcrystalline silicon in at least part of the photoconductive member. CONSTITUTION:This photoconductive member has a conductive base 21, a barrier layer 22, a photoconductive layer 23 and a surface layer 24. The barrier layer 22 is formed of the amorphous silicon contg. hydrogen and/or halogen element, the element belonging to the group III or V of periodic table and the element selected from carbon, nitrogen and oxygen. At least part of the photoconductive layer 23 is formed of the microcrystalline silicon contg. hydrogen and/or halogen element and the element belonging to the group III or V of periodic table. The surface layer 24 is formed of the amorphous silicon contg. hydrogen and/or halogen element and the element selected from carbon, nitrogen and oxygen. The photoconductive member which has high resistance and excellent electrostatic charge characteristic, has the high photosensitive characteristic in visible light and near IR region, permits easy production and has high practicability is thus obtd. |
