发明名称 Vertical slow-wave symmetric inductor structure for semiconductor devices
摘要 A vertical inductor structure in a semiconductor device includes a plurality of vertically oriented spirals that produce magnetic field in a dielectric material above the surface of a semiconductor substrate thereby preventing any eddy currents from propagating in the substrate. An inductor shield structure is also provided. The inductor shield structure is formed over the substrate surface and between an inductor such as the vertical inductor structure or other inductor types and also prevents eddy currents from being induced in the substrate. The inductor shield may surround the inductor to various degrees.
申请公布号 US9508480(B2) 申请公布日期 2016.11.29
申请号 US201113222665 申请日期 2011.08.31
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Cho Hsiu-Ying
分类号 H01F5/00;H01F27/28;H01F17/00 主分类号 H01F5/00
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. A semiconductor device comprising an inductor structure formed on a semiconductor substrate with a planar substrate surface, said inductor structure comprising at least two flat spiral conductive structures, each of said flat spiral conductive structures formed of at least three horizontal strips of conductive material vertically separated, each of said horizontal strips having a respective horizontal area, wherein a projected horizontal area of each of said flat spiral conductive structure is equal to said horizontal area of a longest one of said strips, wherein each of said horizontal strips of conductive material comprise outer edges that are vertically aligned with each other in a direction substantially normal to said planar substrate surface, and wherein said horizontal strips of conductive material of a first of said at least two flat spiral conductive structures and said horizontal strips of conductive material of a second of said at least two flat spiral conductive structures are aligned such that a primary axis of a magnetic field of the first flat spiral conductive structure is in line with a primary axis of a magnetic field of the second flat spiral conductive structure, further comprising a shield comprising a plurality of adjacent strips extending between at least two of the horizontal strips of the first and second flat spiral structures, and wherein said plurality of adjacent strips are perpendicular to said flat spiral structures.
地址 Hsin-Chu TW