| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device that allows increasing an inductance value without lengthening the length of bonding wires.SOLUTION: A high-frequency semiconductor device 1 includes a semiconductor chip 24 of a multi-cell configuration, a matching circuit, and a plurality of bonding wires 12 and 14 connected in parallel between the semiconductor chip 24 and the matching circuit. The plurality of bonding wires 12 and 14 have a predetermined angle lower than or equal to 90° on a plane with respect to the semiconductor chip 24. |
