| 摘要 |
PURPOSE:To greatly improve element characteristics, such as a light emitting efficiency, threshold current and the like, by making a negative conductivity type region below an active layer three layers and forming a P-type inversion region formed in the negative conductivity type region to a prescribed depth that does not reach a substrate by the diffusion of an impurity from a layer of the conductivity type opposite to that of an embedded layer. CONSTITUTION:A negative conductivity type semiconductor layer, for example, an N-type InP layer 2'', the N-type InP layer 2 with a lower carrier density than the layer 2'', the N-type InP layer 2' with the higher carrier density than the layer 2'', an InGaAsP active layer 3, the P-type InP layer 4 and a P-type InGaAsP layer 5 of opposite conductivity type are sequentially grown on a substrate 1. A mask film 6 is formed on a light emitting portion forming region and etching is conducted from the surface of substrate until the N-type InP layer 2 is reached to form a stripe-like light emitting portion. Then, a P-type InP layer 8 and an N-type InP layer 9 both containing, for example, Zn are grown on the light emitting portion. At this time, a P-type inversion region can be formed by the diffusion of Zn in the portion of the N-type InP layer 2 wherein it is in contact with the P-type InP layer 8 without reaching the substrate 1. Thus, an element having a low threshold, a high efficiency and excellent characteristics is obtained.
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