Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body

摘要

In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride heterojunction. The III-nitride semiconductor device also includes a gate arrangement situated in the gate well and including a gate electrode and a field plate. The field plate includes at least two steps, the at least two steps being defined in the dielectric body.

主权项

1. A III-nitride semiconductor device comprising:
a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas; a single gate dielectric layer situated over said III-nitride heterojunction; a gate well formed in a dielectric body, said dielectric body comprising a first dielectric material and a second dielectric material and being situated over said III-nitride heterojunction and said single gate dielectric layer; first and second ohmic electrodes extending through said dielectric body and said single gate dielectric layer to contact said III-nitride heterojunction; a gate arrangement situated in said gate well and comprising a gate electrode and a field plate; said field plate comprising at least three steps situated within said gate well, said at least three steps being defined in said first dielectric material and said second dielectric material of said dielectric body; wherein at least one of said at least three steps is wider than another of said at least three steps, wherein said dielectric body comprises a plurality of dielectric layers each formed from one of said first dielectric material and said second dielectric material.