| 摘要 |
<p>The invention provides a means of improving the threshold voltage uniformity of ion-implanted GaAs MESFETs by using co-implantation of two dopant species rather than the normal situation where only one dopant species is used. The two dopant species are chosen so that the effects on activation of stoichiometric changes in the substrate are in opposite senses - thus stoichiometric effects on total activation (and thus on threshold voltage of devices) are reduced or eliminated.</p> |
