| 摘要 |
<p>A bipolar transistor has a collector region (12, 16, 18) formed on a silicon substrate (10), a base region (30,36) and an emitter region (42) formed by self alignment in the collector region (12, 16, 18), and a multi-conductive layer (20, 22) formed in contact with the base region (30,36). The base region of the bipolar transistor has first and second regions (30, 36) having high and low impuritv concentrations, respectively. The first region is doped with an impurity using the multi-conductive layer (20,22) as a diffusion source. The second region is doped with an impuriry using an insulating layer formed in the inner surface of an opening in the multi-conductive layer (20,22) and the conductive layer as a mask. The multi-conductive layer has a polycrystalline silicon film (20) formed on the first region, and a metal silicide film (22) overlaid on the entire surface of the polycrystalline silicon film (20).</p> |
