| 摘要 |
The capacitor of a semiconductor memory device is mfd. by (a) forming a field oxide film (22), a gate (23), and a source/drain region (24) on the semiconductor substrate (21), and then covering an insulating oxide film (25) and a protecting nitride film (26) on the whole surface, (b) lifting off the films (25,26), and then depositing a nitride film (28) on the whole surface, (c) etching-back the film (28) to form a sidewall on the both side of the buried contact part, (d) oxidizing the contact part to form an oxide film (29), (e) lifting off the films (26,29) and the sidewall, and (f) forming a storage node (30a), a dielectric film (32a) and a plate (33a).
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