| 摘要 |
The stacked capacitor is mfd. by (a) forming an oxide film (2) and a nitride film (3) on the silicon substrate (1), (b) selectively lifting off the films (2,3) to expose the substrate, (c) ion-implanting an inpurity using a photoresist (4) as a mask, (d) lifting off the photoresist, and then growing an oxide film of the exposed substrate to form a field oxide film (5), (e) lifting off the films (2,3,5), and (f) forming a thin tranch (6) on the inner of the device-forming region. The capacitor is used for a VLSI circuit of at least 16 mega DRAM.
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